ALL
孙林锋
职称: 教授、博士生导师; 国家重点研发计划首席青年科学家、国家级海外高层次青年引进人才、北京市杰出青年、“特立青年学者”
联系电话:
学系: 凝聚态物理系
E-mail: sunlinfeng@bit.edu.cn
通讯地址: bat365在线中国官网登录入口良乡校区南区理学楼
教育经历
2011–2015 新加坡南洋理工大学 数理学院 博士
(期间获国家优秀留学生奖学金,以及“全球华人物理和天文学会-美国物理学会杰出会议海报奖”一等奖)
2008–2010 浙江大学理学院 硕士
(期间获国际顶尖光刻机制造商ASML奖学金)
工作经历
2021-01至今,bat365在线中国官网登录入口bat365在线中国官网登录入口,教授、博士生导师
入选2021中国新锐科技人物
2018-01至2020-12, 韩国成均馆大学, 研究教授
入选韩国“高丽学者”
2017-02至2017-12, 韩国成均馆大学,博士后
2016-04至2017-02,新加坡科技设计大学,博士后
科研方向
主要从事低维量子功能材料(量子二维材料、量子拓扑材料等)的物性探索及其各类忆阻行为器件在信息存储和类脑计算上的应用,主要包括:
(1)量子功能材料/异质结器件设计与制备;
(2)基于各类忆阻器件的信息存储过程设计与机理研究;
(3)人工智能神经拟态芯片物理原型设计;
(4)基于人工神经网络的机器学习及应用;
学术成就
长期从事低维量子功能材料、器件物理及其在类脑计算和忆阻器上的应用, 并取得一系列重要的创新性研究成果。例如:(1)以量子半导体材料为基础的神经突触计算在人脑声音定位中的应用; (2)基于量子功能材料异质结的大容量信息数据存储阵列的设计与开发; (3)基于量子功能材料缺陷工程的传感器内储备池计算用于智能语言学习等。到目前为止,已在国际高水平期刊上发表SCI论文80余篇,其中第一作者/通讯作者代表作包括: Science Advances, Nature Communications, Physics Review Letters, Advanced Materials, Nano Letters, Advanced Functional Materials, Nano Energy, Small等,论文引用6200余次,专利授权6项;在国内外重要学术会议上做大会/分会邀请报告30余场。
代表性研究成果
(1) Ce Li, Tianze Yu, Zirui Zhang, Qingsong Deng, Fei Hui, Zhongrui Wang, Mario Lanza*,Linfeng Sun*, Coupled polarization dynamics and charge tunneling enable reconfigurable heterojunctions, Nature Communications, 2026, 17, 4036 (Corresponding Author).
(2) Yinan Lin, Dongliang Yang, Zhongyi Wang, Weili Zhen, Tianze Yu, Fei Xue, Hongtao Wei*, Linfeng Sun*, Antiferroelectric polarization enabling physical activation in CuBiP2Se6 for medical image processing, Nature Communications, 2026, 17, 4763 (Corresponding Author).
(3) Huihan Li, Haozhe Jin, Ze Hua, WeiliZhent, Dongliang Yang, Tianze Yu, Zirui Zhang, Ce L, Qianyu Zhang, Weiting Miao, Luhan Wang, Hongxing Yin, Zhaoming Lu*, Ruiwen Shaot, Linfeng Sun*, Ionic–Electronic Coupling Enables Stable and Precise Memristive Switching through Reversible Crystalline-Solid Solution Transition, Nano Letters, 2026, 26, (1), 641-650 (Corresponding Author).
(4) Tianze Yu, Ce Li, Weili Zhen, Dongliang Yang, Zirui Zhang, Huihan Li, Yutao Li, Ruitong Bie, Mingyue Yuan, Linfeng Sun*, Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 106 On/Off Ratio under ±1 V Gate-Voltage Sweep, Nano Letters, 2026 (Corresponding Author).
(5) Mingyue Yuan, Zirui Zhang, Ce Li, Lin Wang*, Linfeng Sun*, 2D Ferroelectrics and Antiferroelectrics for Neuromorphic Computing Devices, Advanced Functional Materials, 2026 (Corresponding Author).
(6) Ce Li, Ning Lin, Dongliang Yang, Tianze Yu, Weili Zhen, Zhongrui Wang*, Linfeng Sun*, Multi-Bit Floating-Gate Memory with an Ultrawide Programmable Window, Small, 2026, e10769 (Corresponding Author).
(7)Dongliang Yang, Weifan Meng, Zhongyi Wang, Tianze Yu, Ce Li, Qianyu Zhang, Zirui Zhang, Huihan Li, Yinan Lin, Fei Xue, Peng Lin,Linfeng Sun*, Polymorphic Functionalization Driven by Ion Displacement-Induced Antiferroelectric Ordering in CuBiP₂Se₆, Nature Communications, 2025, 16, 10666 (Corresponding Author).

(8)Dongliang Yang, Yinan Lin, Weifan Meng, Zhongyi Wang, Huihan Li, Ce Li, Zirui Zhang, Qianyu Zhang, Junqi You, Jiarui Wang, Tianze Yu, Yutao Li, Weiting Miao, Weili Zhen, Fei Xue, Ruixiang Fei, Linfeng Sun*, Relaxor Antiferroelectric Dynamics for Neuromorphic Computing, Advanced Materials, 2025, 37(27), 2419204 (Corresponding Author).

(9)Zhonglin Li, Yingying Wang*, Ruitong Bie, Dongliang Yang, Tianze Yu, Wenjun Liu, Linfeng Sun*, Zexiang Shen*, Guiding Polaritonic Energy and Momentum Through 2D Bravais Lattices, Advanced Materials, 2025, 37(25), 2505856 (Co-Corresponding Author).

(10)Heemyoung Hong, Xi Chen, Woohyun Cho, Ho Yeon Yoo, Jaewhan Oh, Minseok Kim, Geunwoo Hwang, Yongsoo Yang, Linfeng Sun*, Zhongrui Wang*, Heejun Yang*, Dynamic Convolutional Neural Networks Based on Adaptive 2D Memristors, Advanced Functional Materials, 35(17), 2422321. (Co-Corresponding Author).

(11)Zirui Zhang, Ce Li, Tianze Yu, Biao Qin, Zhongyi Wang, Weili Zhen, Qingsong Deng, Zhenqi Jiang, Can Liu, Fei Xue, Linfeng Sun*, Multifunctional Device With Switchable Hysteresis Direction Based on Multilayer rMoS2, Small, 2025, e05463 (Corresponding Author).

(12)Qianyu Zhang, Yinan Li, Dongliang Yang, Ce Li, Weili Zhen, Weiting Miao, Zhe Yang, Zhongrui Wang, Jinchao Cao, Renjing Xu*, Linfeng Sun*, Extra-feature Injected Reservoir Computing for Multi-Language Handwritten Digit Recognition Based on 2D Optoelectronic Memristor, Advanced Optical Materials, 2025, 13 (25), e00559 (Corresponding Author).

(13)Ruitong Bie, Xi Chen, Zhe Yang, Dong An, Yifei Yu, Qianyu Zhang, Ce Li, Zirui Zhang, Dingchen Wang, Jichang Yang, Songqi Wang, Binbin Cui, Dongliang Yang, Lin Hu*, Zhongrui Wang*, Linfeng Sun*, Tunable Neuromorphic Computing for Dynamic Multi-Timescale Sensing in Motion Recognition, Cyborg and Bionic Systems, 2025, 6, 0412 (Corresponding Author).

(14)Xiangke Wang, Hao Wang, Dongliang Yang, Yinan Lin, Ruitong Bie, Renjing Xu*, Linfeng Sun*, Low-Voltage Forming-Free Flexible Memristors with Multifunctionality for Hybrid Storage and Cryptographic Random Number Generation in Edge Devices, Nano Energy, 2025, 142(A), 111225 (Corresponding Author).

(15)Junqi You, Yihong Hu, Dongliang Yang, Yinan Lin, Weifan Meng, Nuo Xu*, Linfeng Sun*, Reliably In-Memory Ternary Stateful Logic Computing Based on Tri-State Memristors with High On/Off Ratio, Advanced Electronic Materials, 2025, 11(14), 2500251 (Corresponding Author).

(16)Ce Li, Xi Chen, Zirui Zhang, Xiaoshan Wu, Tianze Yu, Ruitong Bie, Dongliang Yang, Yugui Yao, Zhongrui Wang, Linfeng Sun*, Charge-selective 2D heterointerface-driven multifunctional floating gate memory for in situ sensing-memory-computing, Nano Letters, 2024, 24(47), 15025 (Corresponding Author).

(17)Xi Chen, Dongliang Yang, Geunwoo Hwang, Yujiao Dong, Wenqi Zhang, Huihan Li, Ruiwen Shao, Yugui Yao, Linfeng Sun,* Zhongrui Wang,* Heejun Yang*, Oscillatory Ising Machine using Two-Dimensional Memristors,ACS Nano, 2024, 18(16), 10758(Co-Corresponding Author)

(18)Eunah Kim, Geunwoo Hwang, Dohyun Kim, Dongyeun Won, Yanggeun Joo, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Pilkyung Moon, Dong-Wook Kim, Linfeng Sun*, Heejun Yang*, Orbital gating driven by giant Stark effect in tunneling phototransistors, Advanced Materials, 2022, 34(6), 2106625. (Co-Corresponding Author)

(19) Bai Sun, Guangdong Zhou, Linfeng Sun, Hongbin Zhao, Yuanzheng Chen, Feng Yang, Yong Zhao and Qunliang Song*, ABO3 multiferroic perovskite materials for memristive memory and neuromorphic computing, Nanoscale Horiz, 2021, 6, 939-970. (Co-first Author)
(20)Linfeng Sun, Zhongrui Wang, Jinbao Jiang, Yeji Kim, Bomin Joo, Shoujun Zheng, Seungyeon Lee, Woo Jong Yu, Baisun Kong, Heejun Yang*, In-sensor reservoir computing for language learning via two dimensional memristors, Science Advances, 7(20), 2021, eabg1455.

(21)Huihan Li, Shaocong Wang, Xumeng Zhang, Wei Wang, Rui Yang, Zhong Sun, Wanxiang Feng, Peng Lin, Zhongrui Wang*, Linfeng Sun*, Yugui Yao, Memristive crossbar arrays for storage and computing applications, Advanced Intelligent Systems, 2021, 2100017. (Invited Paper). Cover. (Co-Corresponding Author)

(22) Guangdong Zhou, Bai Sun, Xiaofang Hu, Linfeng Sun, Zhou Zou, Bo Xiao, Wuke Qiu, Bo Wu, Jie Li, Juanjuan Han, Liping Liao, Cunyun Xu, Gang Xiao, Lihua Xiao, Jianbo Cheng, Shaohui Zheng, Lidan Wang, Qunliang Song, Shukai Duan, Negative photoconductance effect: An extension function of the TiOx-based memristor, Advanced Science, 8 (13), 2021, 2003765. (Co-first Author)
(23) Linfeng Sun, Wei Wang, Heejun Yang*, Recent progress in synaptic devices based on 2D materials, Advanced Intelligent Systems, 2(5), 2020, 1900167. (Invited Paper).
(24)Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Youngmin Kim*, Heejun Yang*, Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications, Nano Energy, 69, 2020, 104472.
(25)Linfeng Sun, Yishu Zhang, Gyeongtak Han, Geunwoo Hwang, Jinbao Jiang, Bomin Joo, Kenji Watanable, Takashi Taniguchi, Young Min Kim, Woo Jong Yu, Bai Sun Long, Rong Zhao*, Heejun Yang*, Self-selective van der Waals hetero-structures for large scale memory array, Nature Communications, 2019, 10, 3161. (Co-first Author)

(26)Linfeng Sun, Hua Yu, Dong Wang, Jinbao Jiang, Dohyun Kim, Hyun Kim, Shoujun Zheng, Mali Zhao, Qi Ge, Heejun Yang*, Selective growth of monolayer semiconductors for diverse synaptic junctions, 2D Materials, 6 (2019) 015029.
(27) Canliang Zhou, Linfeng Sun, Fengquan Zhang, Chenjie Gu*, Shuwen Zeng*, Taojiang Jiang, Xiang Shen, Diing Shenp Ang, Jun Zhou*, Electrical tuning of the SERS enhancement by precise defect density control, ACS Applied Materials & Interfaces, 11(37) 2019, 34091. (Co-first Author)
(28)Linfeng Sun, Yishu Zhang, Geunwoo hwang, Jinbao Jiang, Dohyun Kim, Yonas Assefa Eshete, Rong Zhao*, Heejun Yang*, Synaptic computation enabled by Joule heating of single-layered semiconductors for sound localization, Nano Letters, 2018, 18 (5): 3229-3234. (Co-first Author)

(29)Linfeng Sun, Wei Sun Leong, Shize Yang, Matthew F. Chishol. Shi Jun LiANG, Lay Kee Ang, Yongjian Tang, Yunwei Mao, Jing Kong*, Huiying Yang*, Concurrent synthesis of high-performance monolayer transition metal disulfides, Advanced Functional Materials, 2017, 27(15): 1605896. (Co-first Author)

(30)Linfeng Sun, Hailong Hu, Da Zhan*, Jiaxu Yan, Lei Liu, Poosie Lee, Zexiang Shen*, Plasma modified MoS2 nanoflakes for surface enhanced Raman scattering, Small, 10 (2014), 6, 1090.
(31)Linfeng Sun, Jiaxu Yan, Da Zhan*, Lei Liu, Hailong Hu, Hong Li, Benkang Tay, Jer Lai Kuo, Chung Che Huang, Daniel W. Hewak, Pooi See Lee, Zexiang Shen*, Spin-orbit splitting in single layer MoS2 revealed by triply resonant Raman scattering, Physical Review Letter, 2013, 111(12): 126801. (Co-first Author)

邀请报告:
(1)国际技术显示大会(在线), 湖北武汉,2020年10月;
(2)韩国成均馆大学Distinguished Lecture Series,韩国水原市,2020年11月;
(3)第一届应用物理论坛, 江苏溧阳,2021年4月;
(4)华南师范大学,广东广州, 2021年4月;
(5)第23届全国半导体物理学术会议,陕西西安,2021年7月;
(6)第二届世界光子大会-光电子材料与器件发展论坛,2021年7月;
(7)2021年IEEE第六届全球光电大会(OGC 2021),2021年9月;
(8)The 13th International Photonics and OptoElectronics Meetings (POEM 2021),2021年11月;
(9)北京邮电大学,北京,2021年11月;邀请报告;
(10)bat365在线中国官网登录入口,北京,2021年11月; 邀请报告;
(11)宁波大学,浙江宁波,2021年12月;邀请报告;
学术兼职
Nano-Micro Letters, 助理编辑;
Frontiers in Materials, 客座编辑;
Frontier in Neuroscience, 客座编辑;
SmartMat, 青年编委;
招生信息
每年拟招收2-3名保送或考研研究生(硕士生、硕博连读生或博士生)、鼓励有学科交叉背景的学生报考(物理、微电子、材料等专业学生均可),欢迎有志于半导体器件物理及应用,对人工智能硬件、软件方向感兴趣的学生加盟。报考前请直接与我联系。同时可招收重点资助博后1~2人,欢迎具有相关经验的优秀青年学者联系。
